Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K
Identifieur interne : 00C049 ( Main/Repository ); précédent : 00C048; suivant : 00C050Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K
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Abstract
Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an InxGa1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p-i-n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L(X) energy separations in InxGa1-xAs. The experimental results are compared with ensemble Monte Carlo calculations. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Large electric-field induced electron drift velocity observed in an In<sub>x</sub>Ga<sub>1-x</sub>As-based p-i-n semiconductor nanostructure at T=300 K</title><author><name sortKey="Liang, W" uniqKey="Liang W">W. Liang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Electrical Engineering, Arizona State University, Tempe</wicri:cityArea></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300 Taiwan, Republic of China</s1></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300 Taiwan</wicri:regionArea><wicri:noRegion>Hsin-Chu 300 Taiwan</wicri:noRegion></affiliation></author><author><name sortKey="Tsen, K T" uniqKey="Tsen K">K. T. Tsen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Ferry, D K" uniqKey="Ferry D">D. K. Ferry</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Wu, Meng Chyi" uniqKey="Wu M">Meng-Chyi Wu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Ho, Chong Long" uniqKey="Ho C">Chong-Long Ho</name></author><author><name sortKey="Ho, Wen Jeng" uniqKey="Ho W">Wen-Jeng Ho</name></author></titleStmt><publicationStmt><idno type="inist">03-0351275</idno><date when="2003-08-18">2003-08-18</date><idno type="stanalyst">PASCAL 03-0351275 AIP</idno><idno type="RBID">Pascal:03-0351275</idno><idno type="wicri:Area/Main/Corpus">00CD07</idno><idno type="wicri:Area/Main/Repository">00C049</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Effective mass</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Monte Carlo methods</term><term>Nanostructured materials</term><term>Raman spectra</term><term>Semiconductor heterojunctions</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361E</term><term>7340K</term><term>7363B</term><term>7867B</term><term>7830F</term><term>7866F</term><term>7847</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Hétérojonction semiconducteur</term><term>Nanomatériau</term><term>Spectre Raman</term><term>Spectre résolution temporelle</term><term>Masse effective</term><term>Méthode Monte Carlo</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an In<sub>x</sub>Ga<sub>1-x</sub>As-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p-i-n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L(X) energy separations in In<sub>x</sub>Ga<sub>1-x</sub>As. The experimental results are compared with ensemble Monte Carlo calculations. © 2003 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Large electric-field induced electron drift velocity observed in an In<sub>x</sub>Ga<sub>1-x</sub>As-based p-i-n semiconductor nanostructure at T=300 K</s1></fA08><fA11 i1="01" i2="1"><s1>LIANG (W.)</s1></fA11><fA11 i1="02" i2="1"><s1>TSEN (K. T.)</s1></fA11><fA11 i1="03" i2="1"><s1>FERRY (D. K.)</s1></fA11><fA11 i1="04" i2="1"><s1>WU (Meng-Chyi)</s1></fA11><fA11 i1="05" i2="1"><s1>HO (Chong-Long)</s1></fA11><fA11 i1="06" i2="1"><s1>HO (Wen-Jeng)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287</s1></fA14><fA14 i1="03"><s1>Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300 Taiwan, Republic of China</s1></fA14><fA14 i1="04"><s1>Telecommunication Laboratories, Chunghwa Telecom Co., Ltd., Taoyuan 326 Taiwan, Republic of China</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>1438-1440</s1></fA20><fA21><s1>2003-08-18</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0351275</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an In<sub>x</sub>Ga<sub>1-x</sub>As-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p-i-n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L(X) energy separations in In<sub>x</sub>Ga<sub>1-x</sub>As. 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